SOI Wafer: 10x10x0.625mm, 2.5um (P-doped) +1.0 SiO2 +625um Si (P-type/Boron doped)

SOI Wafer: 10x10x0.625mm, 2.5um (P-doped) +1.0 SiO2 +625um Si (P-type/Boron doped)Specifications Device Layer Size: 10x10 Type Dopant: N type P doped Orientation: <1 0 0>+ 0. 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0 um + 0. 1 um Handle Wafers: Type Dopant P type B doped Orientation <1 0 0>+ 0. 5 degree Resistivity: 10 20 ohm. cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner

Size:            5mm x 5mm x 0

One mobile table (600 L x 600 W x 600 H

Response Time:                       100 ms

PSpecifications

Quartz Holder: 325 mm L x 25 mm W x 15 mm H

Water Feedthrough 1/8 in

Crystal wafers A-Z

<100> or <111>

Such a gas diffusion layer is engineered to have state-of-the-art performance over a wide range of operating conditions and it can serve as catalyst support for organic electrochemistry

It is made of stainless steel and connects to the vacuum pump inlet and bellow by using KF25 flanges

It is easy to separate after test for microstructure analysis

Size:                                2" dia x 0