SKU:83154710862
GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 2" dia x 0. 5mm Polishing: one side polished Doping: undoped, Conductor type: SI ( semi insulating Carrier Concentration: N A Mobility: 3710 6230cm^2 V. S EPD: N A Resistivity:(0. 2 5. 5)E8 ohm. cm Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Please clean the machine after the completion of each use
Specifications Dimensions (Dia x Height) Case: 14mm(OD) x 13
Single crystal data may slight different from the standard due to lattice deformation)
Carrier concentration: (1-3)x10^17 ohm
8mm Nickel Tab with hot melt tape as Negative Terminal for Polymer Li-ion Battery -- 50pcs/Box
It is your responsibility to find the best milling procedure based on your material
Resistivity: 1-10 Ohms/cm (If you would like to measure the resistivity accurately
Doping: Ga doped
Speed Range Variable 0-600 rpm with LED digital display
MSK-117A Edge Trimming Machine
and CR2450 coin cells
0 mm L * 5
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