SKU:83154710862

GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,

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Regular price $171.93 USD
Regular price $214.93 USD Sale price $171.93 USD
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17

Description

GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 2" dia x 0. 5mm Polishing: one side polished Doping: undoped, Conductor type: SI ( semi insulating Carrier Concentration: N A Mobility: 3710 6230cm^2 V. S EPD: N A Resistivity:(0. 2 5. 5)E8 ohm. cm Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Please clean the machine after the completion of each use

Specifications Dimensions (Dia x Height) Case: 14mm(OD) x 13

Single crystal data may slight different from the standard due to lattice deformation)

Carrier concentration: (1-3)x10^17 ohm

8mm Nickel Tab with hot melt tape as Negative Terminal for Polymer Li-ion Battery   -- 50pcs/Box

It is your responsibility to find the best milling procedure based on your material

Resistivity:                            1-10 Ohms/cm (If you would like to measure the resistivity accurately

Doping:                          Ga doped

Speed Range Variable 0-600 rpm with LED digital display

MSK-117A  Edge Trimming Machine

and CR2450 coin cells

0 mm L * 5

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